Irf7341 datasheet pdf

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Irf7341 datasheet pdf

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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Title MOSFET, DUAL N-CH,V, A, SOICIRF DatasheetKB: Distributor elementAsia-Pacific Stock IRF Datasheet (PDF)International Rectifier: Part IRF Description HEXFET Power MOSFET: File Size Kbytes: Html View Title MOSFET, DUAL N-CH,V, A, SOICDescriptionDatasheet IRF DatasheetKB Description: HEXFET Power MOSFETResults. Manufacturer: Guangdong Youtai Semiconductor Co., Ltd IRF PDF File Similar Datasheet IRF Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, International Rectifier,V Dual N-Channel HEXFET Power MOSFET in a SOpackage  · IRFTRPBF Infineon Technologies MOSFETs MOSFT DUAL NChV A datasheet, inventory, & pricing 7WORLD HEADQUARTERSKansas St., El Segundo, California, Tel: () IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RHBB, Kansas St., El Segundo, California, USA Tel: () TAC Fax: () Visit us at for sales contact information/04 IRF Product details. Dual N-Channel Missing: pdf This datasheet has been download from: Datasheets for electronics components IRF International Rectifier HEXFET Power MOSFET. RoHS Compliant. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, International Rectifier,V Dual N-Channel HEXFET Power MOSFET in a SOpackage IRF International Rectifier HEXFET Power MOSFET. Benefits. Description. Datasheet: Kb/7P. Benefits. Description. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. RoHS Compliant IRF ameter Max. Units VDS Drain Source VoltageV ID @ TC =°C Continuous Drain Current, VGS @V ID @ TC =°C Continuous Drain Current, VGS @V A IDM Pulsed Drain Current †PD @TC =°C Power Dissipation PD @TC =°C Power Dissipation Linear Derating Factor W/°C VGS Gate-to F Product details. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an MOSFET (Si/SiC) N-Channel Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area The °C rating for the SOpackage provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. IRF IRF OverviewV Dual N-Channel HEXFET Power MOSFET in a SOpackage. Low RDS (on) Dynamic dv/dt Rating. Description. Fast Switching.